Данные
attribute | Parameter value | |
---|---|---|
Catalogs | MOSFETs | |
type | N-channel | |
Drain-to-source voltage (Vdss) | 1.5kV | |
Continuous Drain Current (Id) | 8A | |
Power (Pd) | 320W | |
On-resistance (RDS(on)@Vgs, Id) | 2.5Ω@10V,4A | |
Threshold voltage (Vgs(th)@Id) | 5V@250uA | |
Gate charge (Qg@Vgs) | 89.3nC@10V | |
Input Capacitance (Ciss@Vds) | 3.255nF@25V | |
Operating temperature | -55℃~+150℃@(Tj) |
STW9N150 Datasheet, PDF — Alldatasheet