Данные
attribute | Parameter value | |
---|---|---|
Catalogs | Transistor (BJT) | |
Transistor type | NPN | |
Collector Current (Ic) | 500mA | |
Collector Breakdown Voltage (Vceo) | 351 | |
Power (Pd) | 250mW | |
DC Current Gain (hFE@Ic, Vce) | 250@100mA,1V | |
Eigenfrequency (fT) | 100MHz | |
Collector cut-off current (Icbo) | 100nA | |
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 700mV@500mA,50mA | |
Operating temperature | — |
BC817-40 Datasheet, PDF — Alldatasheet